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Test Grade InAs Indium Arsenide Wafer 4 Inch P Type High Purity Research Use

Test Grade InAs Indium Arsenide Wafer 4 Inch P Type High Purity Research Use

Test Grade InAs Indium Arsenide Wafer 4 Inch P Type High Purity Research Use

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Wafer Thickness: 900±25um Conduction Type: P Type
Product Name: 4" InAs Wafer Wafer Diamter: 4 Inch
Grade: Test Grade Keyword: High Purity Indium Arsenide Wafer
EPD: <3x104cm-2 TTV: <15um
High Light:

n type wafer


inas wafer

P Type , InAs (Indium Arsenide) Wafer , 4”, Test Grade


4" InAs Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 900±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration (1-10)x1017cm-3
Mobility 100-400cm2/V.s
EPD <3x104cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette


Mechanical properties, elastic constants, lattice vibrations of InAs Wafer

Basic Parameter

Bulk modulus 5.8·1011 dyn cm-2
Density 5.68 g cm-3
Hardness on the Mohs scale 3.8
Surface microhardness (using Knoop's pyramid test) 430 kg mm-2
Cleavage plane {100}
Piezoelectric constant e14= -4.5·10-2 C m-2
Electron g - factor  
298 K -17.5
80 K -15.4


What is InAs wafer?


Indium arsenide is a kind of III-V compound semiconductor material composed of indium and arsenic.It is a silver gray solid with a sphalerite crystal structure at room temperature. The lattice constant is 0.6058nm, and the density is 5.66g/cm (solid) and 5.90g/cm (liquid at melting point). The band structure is a direct transition with a band gap (300K) of 0.45ev. the dissociation pressure of as is only 0.033mpa, and the single crystal can be grown from the melt at atmospheric pressure. The commonly used methods are Hb and LEC. InAs is a kind of semiconductor material which is difficult to purify. The residual carrier concentration is higher than l × 10 / cm, the room temperature electron mobility is 3.3 × 10 ^ 3cm / (V · s), and the hole mobility is 460cm / (V · s). The effective segregation coefficient of sulfur in In and As is close to 1, so it is used as n-type dopant to improve the uniformity of longitudinal carrier concentration distribution. For industrial InAs (s) single crystal, n ≥ 1 × 10 / cm3, μ ≤ 2.0 × 10cm / (V · s), EPD ≤ 5 × 10 / cm3.


Bulk modulus (compressibility-1) Bs= 5.81·1011 dyn/cm2
Shear modulus C'= 1.90·1011 dyn/cm2
[100] Young's modulus Yo= 5.14·1011 dyn/cm2
[100] Poisson ratio σo = 0.35

Acoustic Wave Speeds

Wave propagation Direction Wave character Expression for wave speed Wave speed (in units of 105 cm/s)
[100] VL (C11/ρ )1/2 3.83
VT (C44/ρ )1/2 2.64
[100] Vl [(C11+C12+2C44)/2ρ]1/2 4.28
Vt|| Vt||=VT=(C44/ρ)1/2 2.64
Vt⊥ [(C11-C12)/2ρ]1/2 1.83
[111] Vl' [(C11+2C12+4C44)/3ρ]1/2 4.41
Vt' [(C11-C12+C44)/3ρ]1/2 2.13


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