|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Wafer Thickness:||900±25um||Conduction Type:||P Type|
|Product Name:||4" InAs Wafer||Wafer Diamter:||4 Inch|
|Grade:||Test Grade||Keyword:||High Purity Indium Arsenide Wafer|
n type wafer,
P Type , InAs (Indium Arsenide) Wafer , 4”, Test Grade
4" InAs Wafer Specification
|Primary Flat Length||16±2mm|
|Secondary Flat Length||8±1mm|
|Laser marking||upon request|
|Suface finish||P/E, P/P|
|Package||Single wafer container or cassette|
|Bulk modulus||5.8·1011 dyn cm-2|
|Density||5.68 g cm-3|
|Hardness on the Mohs scale||3.8|
|Surface microhardness (using Knoop's pyramid test)||430 kg mm-2|
|Piezoelectric constant||e14= -4.5·10-2 C m-2|
|Electron g - factor|
What is InAs wafer?
Indium arsenide is a kind of III-V compound semiconductor material composed of indium and arsenic.It is a silver gray solid with a sphalerite crystal structure at room temperature. The lattice constant is 0.6058nm, and the density is 5.66g/cm (solid) and 5.90g/cm (liquid at melting point). The band structure is a direct transition with a band gap (300K) of 0.45ev. the dissociation pressure of as is only 0.033mpa, and the single crystal can be grown from the melt at atmospheric pressure. The commonly used methods are Hb and LEC. InAs is a kind of semiconductor material which is difficult to purify. The residual carrier concentration is higher than l × 10 / cm, the room temperature electron mobility is 3.3 × 10 ^ 3cm / (V · s), and the hole mobility is 460cm / (V · s). The effective segregation coefficient of sulfur in In and As is close to 1, so it is used as n-type dopant to improve the uniformity of longitudinal carrier concentration distribution. For industrial InAs (s) single crystal, n ≥ 1 × 10 / cm3, μ ≤ 2.0 × 10cm / (V · s), EPD ≤ 5 × 10 / cm3.
|Bulk modulus (compressibility-1)||Bs= 5.81·1011 dyn/cm2|
|Shear modulus||C'= 1.90·1011 dyn/cm2|
| Young's modulus||Yo= 5.14·1011 dyn/cm2|
| Poisson ratio||σo = 0.35|
|Wave propagation Direction||Wave character||Expression for wave speed||Wave speed (in units of 105 cm/s)|
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.