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Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type

Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type

Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: InAs Substrate Wafer Wafer Diamter: 3 Inch
Wafer Thickness: 600±25um Conduction Type: P Type
Grade: Prime Grade Keyword: Single Crystal Indium Arsenide Wafer
TTV: <12um WARP: <15um
High Light:

3 inch wafer

,

inas wafer

P Type , Single Crystal InAs Substrate , 3”, Prime Grade

 

3" InAs Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration (1-10)x1017cm-3
Mobility 100-400cm2/V.s
EPD <3x104cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

What is InAs wafer?

 

InAs crystal has high electron mobility and mobility ratio (μ E / μ H = 70), low magneto resistance effect and low resistance temperature coefficient. It is an ideal material for manufacturing Hall devices and magneto resistance devices. The emission wavelength of InAs is 3.34 μ M. in GaAs B, InAsPSb and inasb multiple epitaxial materials with lattice matching can be grown on InAs substrate. Lasers and detectors for optical fiber communication at 2-4 μ M band can be manufactured.

 

PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 100 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, mechanical grade,test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offers materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

 

What is a InAs test Wafer?

 

Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

Electrical properties of InAs Wafer

Basic Parameters

Breakdown field ≈4·104 V cm-1
Mobility of electrons ≤4·104 cm2V-1s-1
Mobility of holes ≤5·102 cm2 V-1s-1
Diffusion coefficient of electrons ≤103 cm2s-1
Diffusion coefficient of holes ≤13 cm2 s-1
Electron thermal velocity 7.7·105 m s-1
Hole thermal velocity 2·105 m s-1

Mobility and Hall Effect

Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Electron Hall mobility versus temperature for different electron concentration:
full triangles no= 4·1015 cm-3,
circles no= 4·1016cm-3,
open triangles no= 1.7·1016cm-3.
Solid curve-calculation for pure InAs.
 
Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Electron Hall mobility versus electron concentration. T = 77 K.
 
Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Electron Hall mobility versus electron concentration T = 300 K
 
Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type

Electron Hall mobility (R·σ) in compensated material

Curve n cm-3 Na+Nd cm-3 θ=Na/Nd
1 8.2·1016 3·1017 0.58
2 3.2·1017 6.1·1018 0.9
3 5.1·1016 3.2·1018 0.96
4 3.3·1016 7.5·1017 0.91
5 7.6·1015 3.4·1017 0.95
6 6.4·1015 3.8·1017 0.96
7 3.3·1015 3.9·1017 0.98

 

Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Electron Hall mobility versus transverse magnetic field, T = 77 K.
Nd (cm-3):
1. 1.7·1016;
2. 5.8·1016.
 

At T = 300 K the electron Hall factor in pure n-InAs rH ~1.3.

Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Hole Hall mobility (R·σ) versus temperature for different acceptor densities.
Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018.
 
Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Hall coefficient versus temperature for different acceptor densities.
Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018.
 

Transport Properties in High Electric Fields

Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Steady state field dependence of the electron drift velocity, 300 K,
F || (100). Theoretical calculation
 
Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Field dependence of the electron drift velocity at different transverse magnetic fields for long (microsecond) pulses.
Experimental results, 77 K
Magnetic field B(T): 1. 0.0; 2. 0.3; 3. 0.9; 4. 1.5.
 
Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Field dependence of the electron drift velocity, 77 K.
Solid lines show results of theoretical calculation for different non-parabolicity
α (eV-1): 1. 2.85; 2. 2.0; 3. 1.5.
Points show experimental results for very short (pico-second pulses)
 

Impact Ionization

Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type The dependence of ionization rates for electrons αi and holes βi versus 1/F, T =77K
 

For electrons:

αi = αoexp(-Fno/ F)
αo = 1.8·105 cm-1;
Fno = 1.6·105 V cm-1 (77 K)

For holes:

βi = βoexp(-Fpo/ F)
At 77 K

1.5·104 V cm-1 < F < 3·104 V cm-1 3·104 V cm-1 < F < 6·104 V cm-1
βo = 4.7·105 cm-1; βo = 4.5·106 cm-1;
Fpo = 0.85·105 V cm-1. Fpo = 1.54·105 V cm-1

 

Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Generation rate g versus electric field for relatively low fields, T = 77 K.
Solid line shows result of calculation.
Experimental results: open and full circles -undoped InAs,
open triangles - compensated InAs.
 
Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction, 77 K.

 

Are You Looking for an InAs substrate?

 

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

About Us

 

Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.

 

After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.

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