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Single Crystal GaSb Wafer 4 Inch N Type Dummy Grade Tellurium Dopant

Single Crystal GaSb Wafer 4 Inch N Type Dummy Grade Tellurium Dopant

Single Crystal GaSb Wafer 4 Inch N Type Dummy Grade Tellurium Dopant

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Single Crystal Gallium Antimonide Wafer Grade: Dummy Grade
Other Name: Gallium Antimonide GaSb Wafer Conduction Type: N Type
Wafer Diameter: 4 Inch Dopant: Tellurium
BOW: <15um Laser Marking: Upon Request
High Light:

2 inch wafer


4 inch wafer

N Type , Single Crystal GaSb Wafer , 4”, Dummy Grade


4" GaSb Wafer Specification

Item Specifications
Dopant Tellurium
Conduction Type N-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 800±25um
Primary Flat Length 32.5±2.5mm
Secondary Flat Length 18±1mm
Carrier Concentration (1-20)x1017cm-3
Mobility 2000-3500cm2/V.s
EPD <2x103cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette


Mechanical properties, elastic constants, lattice vibrations of GaSb Wafer

Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Elastic constants,Acoustic Wave Speeds,Phonon frequencies.


PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

Basic Parameter

Bulk modulus 5.63·1011 dyn cm-2
Density 5.614 g cm-3
Hardness on the Mohs scale 4.5
Surface microhardness (using Knoop's pyramid test) 450 kg mm-2
Cleavage plane {100}
Piezoelectric constant e14= -0.13 C m-2

For T=300 K

Bulk modulus (compressibility-1) Bs= 5.62·1011dyn cm-2
Shear modulus C'= 2.4·1011dyn cm-2
[100] Young's modulus Yo= 6.31·1011dyn cm-2
[100] Poisson ratio σo = 0.31

Acoustic Wave Speeds

Wave propagation Direction Wave character Expression for wave speed Wave speed (in units of 105 cm/s)
[100] VL (C11/ρ )1/2 3.97
VT (C44/ρ)1/2 2.77
[100] Vl [(C11+Cl2+2C44)/2ρ]1/2 4.38
Vt|| Vt||=VT=(C44/ρ)1/2 2.77
Vt⊥ [(C11-C12)/2ρ]1/2 2.07
[111] Vl' [(C11+2C12+4C44)/3ρ]1/2 4.50
Vt' [(C11-C12+C44)/3ρ]1/2 2.33

Phonon frequencies

(in units of 1012 Hz)

νLO(Γ15) 6.87 νTA(L3) 1.37
νTA(X5) 1.70 νLA(L1) 4.60
νLA(X3) 4.99 νLO(L1) 6.15
νTO(X5) 6.36 νTO(L3) 6.48
νLO(X1) 6.35    


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