|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||Single Crystal Gallium Antimonide Wafer||Grade:||Dummy Grade|
|Other Name:||Gallium Antimonide GaSb Wafer||Conduction Type:||N Type|
|Wafer Diameter:||4 Inch||Dopant:||Tellurium|
|BOW:||<15um||Laser Marking:||Upon Request|
2 inch wafer,
4 inch wafer
N Type , Single Crystal GaSb Wafer , 4”, Dummy Grade
4" GaSb Wafer Specification
|Primary Flat Length||32.5±2.5mm|
|Secondary Flat Length||18±1mm|
|Laser marking||upon request|
|Suface finish||P/E, P/P|
|Package||Single wafer container or cassette|
Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Elastic constants,Acoustic Wave Speeds,Phonon frequencies.
PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
|Bulk modulus||5.63·1011 dyn cm-2|
|Density||5.614 g cm-3|
|Hardness on the Mohs scale||4.5|
|Surface microhardness (using Knoop's pyramid test)||450 kg mm-2|
|Piezoelectric constant||e14= -0.13 C m-2|
|Bulk modulus (compressibility-1)||Bs= 5.62·1011dyn cm-2|
|Shear modulus||C'= 2.4·1011dyn cm-2|
| Young's modulus||Yo= 6.31·1011dyn cm-2|
| Poisson ratio||σo = 0.31|
|Wave propagation Direction||Wave character||Expression for wave speed||Wave speed (in units of 105 cm/s)|
(in units of 1012 Hz)
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