|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||Float Zone Silicon Wafe||Feature:||High Resistivity|
|Diameter:||150±0.5 Mm||Thickness:||675±15 Um|
cz silicon wafer,
epitaxial silicon wafer
Float-Zone Silicon Wafer With High-Resistivity And Good Lifetime.
The monocrystalline-silicon is produced with the combination of Czochralski and float-zone processes, and has the quality between the CZ monocrystalline silicon and FZ monocrystalline silicon; the special elements can be doped, such as the Ga, Ge and others. The new-generation CFZ silicon solar wafers are better than various silicon wafers in global PV industry on each performance index; the conversion efficiency of solar panel is up to 24-26%. The products are mainly applied in the high-efficiency solar batteries with the special structure, back-contact, HIT and other special processes, and more widely used in the LED, power elements, automobile, satellite and other various products and fields.
Our advantages at a glance
1.Advanced epitaxy growth equipment and test equipment.
2.Offer the highest quality with low defect density and good surface roughness.
3.Strong research team support and technology support for our customers
FZ monocrystalline silicon specification
|Off-orientation||4±0.5 degree to the nearest <110>|
|RRV||≤15% (Max edge-Cen)/Cen|
|Primary Flat Length||57.5±2.5 mm|
|Primary Flat Orientation||<011>±1 degree|
|Secondary Flat Length||None|
|Secondary Flat Orientation||None|
|Edge Profile||SEMI Standard|
|Front Surface||Chemical-Mechenical Polishing|
|LPD||≥0.3 um@≤15 pcs|
|Back Surface||Acid Etched|
|Package||Vacuum Packing; Inner Plastic, Outer Aluminum|
The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.
Utilizing the foreign-material diffusion mechanism, add the gas-phase foreign-material during the float-zone process of monocrystalline silicon, to solve the doping problem of float-zone process from the root, and to get the GDFZ-silicon which is N-type or P-type, has the resistivity 0.001-300 Ω.cm, relative good resistivity uniformity and neutron irradiation. It is applicable for producing various semi-conductor power elements, insulate-gate bipolar transistor (IGBT) and high-efficiency solar cell, etc.
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.