Home ProductsGallium Nitride Wafer

Semi Insulating GaN 4 Inch Wafer Epitaxial Layer On Sapphire Substrates

Semi Insulating GaN 4 Inch Wafer Epitaxial Layer On Sapphire Substrates

Semi Insulating GaN 4 Inch Wafer Epitaxial Layer On Sapphire Substrates

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Contact Now
Detailed Product Description
Product Name: 4inch Semi-insulating Gan/sapphire Substrates Thickness: 1.8 ±0.5 μm
Other Name: GaN Wafer Mobility: ~ 200cm2 / V·s
Item: PAM-T-GaN-100-SI Conduction Type: Semi-Insulating
Dimension: 100 ±0.1 Mm Resistivity (300K): > 105 Ω·cm
High Light:

gallium nitride gan


gan wafer

Plane (0001) 4 Inch Semi-Insulating GaN Epitaxial Layer On Sapphire Substrates


Here shows detail specification:

4inch Semi-Insulating GaN/Sapphire Substrates

Item PAM-T-GaN-100-SI
Dimension 100 ±0.1 mm
Thickness 1.8 ±0.5 μm
Orientation of GaN C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN (1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type Semi-Insulating
Resistivity (300K) > 105 Ω·cm
Carrier Concentration >1x1018cm-3(≈doping concentration)
Mobility ~ 200cm2 / V·s
Dislocation Density > 5x108cm-2(estimated by FWHMs of XRD)
Structure 5 ±1 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire
Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire (11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness: Front side: Ra<0.5nm, epi-ready;
Back side: etched or polished.
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room





































4inch Semi-Insulating GaN/Sapphire Substrates

FWHM and XRD report


A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.


FWHM and XRD of AlN template

Semi Insulating GaN 4 Inch Wafer Epitaxial Layer On Sapphire Substrates


FWHM and XRD of AlN template


Here we show experiment as an example:

Experiment on GaN on sapphire:Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition:


Figure 1 shows a low-temperature PL spectra (at 77 K) of GaN films grown on different substrates. PL spectra of GaN grown on different substrates are dominated by the near-band-edge emission at around 360 nm. The full width at half maximum (FWHM) of the GaN films produced on samples A (4 nm) and B (8 nm) are narrower than that of the films grown on samples C (10 nm) and D (13 nm), indicating the low defect density and high crystalline quality of the GaN films due to their lower lattice mismatch, which is consistent with the XRD results. Similar trends of the yellow band-emission peak on these samples were also observed (data not shown here). The yellow luminescence is related to deep level defects in GaN

Semi Insulating GaN 4 Inch Wafer Epitaxial Layer On Sapphire Substrates

Figure 1. Low-temperature photoluminescence (PL) spectra (at 77 K) of GaN films grown on different substrates. FWHM: full width at half maximum


PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.


PAM-XIAMEN’sGaN on sapphire templates are available in diameters from 2" up to 6",and consist of a thin layer of crystalline GaN grown on a sapphire substrate. Epi-ready templates now available..


About Us


Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.


After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.

Contact Details
Send your inquiry directly to us (0 / 3000)

Other Products