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Prime Grade Indium Arsenide Wafer Zn Doped 2 Inch InAs Epi Ready Wafer

Prime Grade Indium Arsenide Wafer Zn Doped 2 Inch InAs Epi Ready Wafer

Prime Grade Indium Arsenide Wafer Zn Doped 2 Inch InAs Epi Ready Wafer

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: P Type InAs Wafer Wafer Diamter: 2 Inch
Conduction Type: P Type Grade: Prime Grade
Wafer Thickness: 500±25um Keyword: Epi Ready Indium Arsenide Wafer
Laser Marking: Upon Request Suface Finish: P/E, P/P
High Light:

n type wafer

,

inas wafer

P Type , Zn-doped InAs Wafer , 2”, Prime Grade , Epi Ready

 

2" InAs Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 2"
Wafer Orientation (100)±0.5°
Wafer Thickness 500±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration (1-10)x1017cm-3
Mobility 100-400cm2/V.s
EPD <3x104cm-2
TTV <10um
BOW <10um
WARP <12um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

What is a InAs test Wafer?

 

Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

 

Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

 

Basic Parameters at 300 K of InAs Wafer?

Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 3.59·1022
de Broglie electron wavelength 400 A
Debye temperature 280 K
Density 5.68 g cm-3
Dielectric constant (static) 15.15
Dielectric constant (high frequency) 12.3
Effective electron mass 0.023mo
Effective hole masses mh 0.41mo
Effective hole masses mlp 0.026mo
Electron affinity 4.9 eV
Lattice constant 6.0583 A
Optical phonon energy 0.030 eV

 

Are You Looking for an InAs substrate?

 

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

About Us

 

Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.

 

After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.

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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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