|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||Gallium Antimonide GaSb Wafer||Feature:||Prime Grade|
|Other Name:||P Type GaSb Wafer||Wafer Diameter:||3”|
2 inch wafer,
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway Wafer
3" GaSb Wafer Specification
|Primary Flat Length||22±2mm|
|Secondary Flat Length||11±1mm|
|Laser marking||upon request|
|Suface finish||P/E, P/P|
|Package||Single wafer container or cassette|
Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Mobility and Hall Effect,Transport Properties in High Electric Fields
,Impact Ionization,Recombination Parameters
PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
|Mobility electrons||≤ 3000 cm2 V-1 s-1|
|Mobility holes||≤ 1000 cm2 V-1 s-1|
|Diffusion coefficient electrons||≤ 75 cm2/s|
|Diffusion coefficient holes||≤ 25 cm2/s|
|Electron thermal velocity||5.8·105 m/s|
|Hole thermal velocity||2.1·105 m/s|
|Calculated field dependence of the electron drift velocity, 300 K.
|Calculated (solid) end experimental (points) current density dependencies versus the electric field, 300 K.
|Fraction of electrons in Γ, L, X valleys as a function of electric field,300 K
|Electron temperature as a function of the electric field, T=77 K.
full and open circle - experimental data
curve are calculated
|Radiative recombination coefficient||~10-10 cm3 s-1|
|300 K||5·10-30 cm6s-1|
Are You Looking for an GaSb Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
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