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Powerway GaSb Wafer Prime Grade Epi Ready Wafer P Type For Research

Powerway GaSb Wafer Prime Grade Epi Ready Wafer P Type For Research

Powerway GaSb Wafer Prime Grade Epi Ready Wafer P Type For Research

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: 4 Inch GaSb Wafer Dopant: Zinc
Feature: Prime Grade Wafer Thickness: 800±25um
Other Name: Gallium Antimonide Wafer Wafer Diameter: 4”
Mobility: 200-500cm2/V.s TTV: <15um
High Light:

4 inch wafer

,

gasb wafer

P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer

 

4" GaSb Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 800±25um
Primary Flat Length 32.5±2.5mm
Secondary Flat Length 18±1mm
Carrier Concentration (5-100)x1017cm-3
Mobility 200-500cm2/V.s
EPD <2x103cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package

Single wafer container or cassette

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer GaSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

 

Thermal and mechanical properties of GaSb Wafer

Bulk modulus 5.63·1011 dyn cm-2
Melting point 712 °C
Specific heat 0.25 J g-1°C -1
Thermal conductivity 0.32 W cm-1 °C-1
Thermal diffusivity 0.23 cm2s-1
Thermal expansion, linear 7.75·10-6 °C -1

 

Powerway GaSb Wafer Prime Grade Epi Ready Wafer P Type For Research Temperature dependence of thermal conductivity n-GaSb.
Electron concentration at 300 K
n-type sample, no (cm-3): 1. 1.6·1017; 2. 8.6·1017; 3. 1.8·1018;
p-type sample. 4. Undoped GaSb po = 1.42·1017(cm-3)
 
Powerway GaSb Wafer Prime Grade Epi Ready Wafer P Type For Research Temperature dependence of thermal conductivity
(for high temperature)
 
Powerway GaSb Wafer Prime Grade Epi Ready Wafer P Type For Research Temperature dependence of specific heat at constant pressure
 
Powerway GaSb Wafer Prime Grade Epi Ready Wafer P Type For Research Temperature dependence of linear expansion coefficient
 

 

About Us

 

Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.

 

After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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