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Polished 3 Inch GaSb Wafer Undoped Epi Ready High Purity Commercial Application

Polished 3 Inch GaSb Wafer Undoped Epi Ready High Purity Commercial Application

Polished 3 Inch GaSb Wafer Undoped Epi Ready High Purity Commercial Application

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Dopant: Undoped Other Name: GaSb Polished Wafer
Product Name: Undoped Gallium Antimonide Wafer Conduction Type: P Type
Wafer Thickness: 600±25um Wafer Diameter: 3 Inch
Laser Marking: Upon Request Suface Finish: P/E, P/P
High Light:

2 inch wafer


4 inch wafer

Undoped Gallium Antimonide Wafer, 3”, Polished Wafer, Epi Ready

3" GaSb Wafer Specification

Item Specifications
Conduction Type P-type
Dopant Undoped
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration (1-2)x1017cm-3
Mobility 600-700cm2/V.s
EPD <2x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

Electrical properties of GaSb Wafer

PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer GaSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.


Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Mobility and Hall Effect,Transport Properties in High Electric Fields
,Impact Ionization,Recombination Parameters


Basic Parameters


Breakdown field ≈5·104
Mobility electrons ≤ 3000 cm2 V-1 s-1
Mobility holes ≤ 1000 cm2 V-1 s-1
Diffusion coefficient electrons ≤ 75 cm2/s
Diffusion coefficient holes ≤ 25 cm2/s
Electron thermal velocity 5.8·105 m/s
Hole thermal velocity 2.1·105 m/s


Radiative recombination coefficient ~10-10 cm3 s-1
Auger coefficient  
77K 2·10-29 cm6s-1
300 K 5·10-30 cm6s-1


Are You Looking for an GaSb substrate?

PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!


About Us


Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.


We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.


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