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P Type Zn Doped GaAs Wafer 2 Inch Test Grade Powerway Wafer LED Application

P Type Zn Doped GaAs Wafer 2 Inch Test Grade Powerway Wafer LED Application

P Type Zn Doped GaAs Wafer 2 Inch Test Grade Powerway Wafer LED Application

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Gallium Arsenide GaAs Wafer Wafer Diamter: 2”
Keyword: Single Crystal And Polycrystalline GaAs Wafer Conduction Type: SC/p-type With Zn Dope Available
Grade: Test Grade Usage: LED Application
Mobility: 1500~3000cm2/V.sec Etch Pit Density: <5000/cm2
High Light:

n type silicon wafer

,

gaas wafer

P Type , Zn-Doped GaAs Wafer , 2”, Test Grade -Powerway Wafer

 

(GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications  
Conduction Type SC/p-type with Zn dope Available
Growth Method VGF
Dopant Mg
Wafer Diamter 2, inch
Crystal Orientation (100)2°/6°/15° off (110)
OF EJ or US
Carrier Concentration E19
Resistivity at RT
Mobility

1500~3000cm2/V.sec

 

Etch Pit Density <5000/cm2
Laser Marking

upon request

 

Surface Finish

P/E or P/P

 

Thickness

220~450um

 

Epitaxy Ready Yes
Package Single wafer container or cassette

 

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C
 
Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

 

What is the GaAs Process?

 

GaAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

 

PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafer, both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications. PAM-XIAMEN can produce wide range grades: prime grade, test grade, and optical grade. Please contact our engineer team for more wafer information.

What is the Electrical propertiesof GaAs Wafer

Basic Parameters

Breakdown field ≈4·105 V/cm
Mobility electrons ≤8500 cm2 V-1s-1
Mobility holes ≤400 cm2 V-1s-1
Diffusion coefficient electrons ≤200 cm2/s
Diffusion coefficient holes ≤10 cm2/s
Electron thermal velocity 4.4·105 m/s
Hole thermal velocity 1.8·105m/s

 

Transport Properties in High Electric Fields

Field dependences of the electron drift velocity.

Solid curve was calculated by
Dashed and dotted curves are measured data, 300 K
Field dependences of the electron drift velocity for high electric fields, 300 K.
 
Field dependences of the electron drift velocity at different temperatures.
 
Fraction of electrons in L and X valleys. nL and nX as a function of electric field F at 77, 160, and 300 K, Nd=0
Dotted curve - L valleys, dashed curve - X valleys.
Mean energy E in Γ, L, and X valleys as a function of electric field F at 77, 160, and 300 K, Nd=0
Solid curve - Γ valleys, dotted curve - L valleys, dashed curve - X valleys.
Frequency dependences of electron differential mobility.
µd is real part of the differential mobility; µd*is imaginary part of differential mobility.
F= 5.5 kV cm-1
 
The field dependence of longitudinal electron diffusion coefficient D||F.
Solid curves 1 and 2 are theoretical calculations. Dashed curves 3, 4, and 5 are experimental data.
Curve 1 - from
Curve 2 - from
Curve 3 - from
Curve 4 - from
Curve 5 -
Field dependences of the hole drift velocity at different temperatures.
 
Temperature dependence of the saturation hole velocity in high electric fields
 
The field dependence of the hole diffusion coefficient.
 

 

Recombination Parameter

Pure n-type material (no ~ 1014cm-3)  
The longest lifetime of holes τp ~3·10-6 s
Diffusion length Lp = (Dp·τp)1/2 Lp ~30-50 µm.
Pure p-type material  
(a)Low injection level  
The longest lifetime of electrons τn ~ 5·10-9 s
Diffusion length Ln = (Dn·τ n)1/2 Ln ~10 µm
(b) High injection level (filled traps)  
The longest lifetime of electrons τ ~2.5·10-7 s
Diffusion length Ln Ln ~ 70 µm

 

Surface recombination velocity versus doping density

Different experimental points correspond to different surface treatment methods.

 

PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafer, both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications. PAM-XIAMEN can produce wide range grades: prime grade, test grade, and optical grade. Please contact our engineer team for more wafer information.

 

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