|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Keyword:||Single Crystal Indium Phosphide Wafer||Wafer Diamter:||3”|
|Product Name:||InP Substrate Wafer||Laser Marking:||Upon Request|
|Grade:||Prime Grade||Conduction Type:||P Type|
test grade wafer,
epi ready wafer
P Type , InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade
P Type, InP Substrate, 3”, Prime Grade
|3"InP Wafer Specification|
|Primary Flat Length||16±2mm|
|Secondary Flat Length||8±1mm|
|Laser Marking||upon request|
|Suface Finish||P/E, P/P|
|Package||Single wafer container or cassette|
|Breakdown field||≈5·105 V cm-1|
|Mobility electrons||≤5400 cm2V-1s-1|
|Mobility holes||≤200 cm2 V-1s-1|
|Diffusion coefficient electrons||≤130 cm2 s-1|
|Diffusion coefficient holes||≤5 cm2 s-1|
|Electron thermal velocity||3.9·105 m s-1|
|Hole thermal velocity||1.7·105 m s-1|
As we touched on in the introduction, Indium Phosphide is a semiconductor made of indium and phosphorus. It is used in high power and high-frequency electronics and has a high electron velocity. In fact, the electron velocity of InP is significantly higher than other more common semiconductors such as Silicon and Gallium Arsenide. It is also found in opto-electronic devices such as laser diodes.
InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.
InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties, InP wafer has higher electron mobility, higher frequency, low power consumption , higher thermal conductivity and low noise performance . PAM-XIAMEN can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.