Home ProductsIndium Phosphide Wafer

P Type Indium Phosphide Wafer Low Etch Pit Density EPD 3 Inch Zinc Dopant

P Type Indium Phosphide Wafer Low Etch Pit Density EPD 3 Inch Zinc Dopant

P Type Indium Phosphide Wafer Low Etch Pit Density EPD 3 Inch Zinc Dopant

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Contact Now
Detailed Product Description
Keyword: Single Crystal Indium Phosphide Wafer Wafer Diamter: 3”
TTV: <12um Wafer Thickness: 350±25um
Product Name: InP Substrate Wafer Laser Marking: Upon Request
Grade: Prime Grade Conduction Type: P Type
High Light:

test grade wafer


epi ready wafer

P Type , InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade


P Type, InP Substrate, 3”, Prime Grade

3"InP Wafer Specification      
Item Specifications
Conduction Type P-type
Dopant Zinc
Wafer Diameter 3"
Wafer Orientation 100±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A >0.5x107Ω.cm
EPD <1000cm-2 <500cm-2 <1x103cm-2 <5x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette


Basic Parameters

Breakdown field ≈5·105 V cm-1
Mobility electrons ≤5400 cm2V-1s-1
Mobility holes ≤200 cm2 V-1s-1
Diffusion coefficient electrons ≤130 cm2 s-1
Diffusion coefficient holes ≤5 cm2 s-1
Electron thermal velocity 3.9·105 m s-1
Hole thermal velocity 1.7·105 m s-1

What is Indium Phosphide?

As we touched on in the introduction, Indium Phosphide is a semiconductor made of indium and phosphorus. It is used in high power and high-frequency electronics and has a high electron velocity. In fact, the electron velocity of InP is significantly higher than other more common semiconductors such as Silicon and Gallium Arsenide. It is also found in opto-electronic devices such as laser diodes.



InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.


Are You Looking for an InP Wafer?

PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties, InP wafer has higher electron mobility, higher frequency, low power consumption , higher thermal conductivity and low noise performance . PAM-XIAMEN can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.


Contact Details
Send your inquiry directly to us (0 / 3000)

Other Products