Home ProductsIndium Arsenide Wafer

P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade

P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade

P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Contact Now
Detailed Product Description
Product Name: InAs Indium Arsenide Wafer Grade: Dummy Grade
Wafer Diamter: 3 Inch Wafer Thickness: 600±25um
Conduction Type: P Type Keyword: Single Crystal InAs Wafer
Secondary Flat Length: 11±1mm Primary Flat Length: 22±2mm
High Light:

n type wafer

,

inas wafer

P Type , InAs Substrate with (100),(111) Orientation , 3”, Dummy Grade

 

 

3" InAs Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration (1-10)x1017cm-3
Mobility 100-400cm2/V.s
EPD <3x104cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

What is a InAs test Wafer?

Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

 

Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

Optical properties of InAs wafer

Infrared refractive index ≈3.51 (300 K)
Radiative recombination coefficient 1.1·10-10 cm3/s
Long-wave TO phonon energy hνTO ≈27 meV (300 K)
Long-wave LO phonon energy hνLO ≈29 meV (300 K)

 

P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade Refractive index n versus photon energy.
Solid curve is theoretical calculation.
Points represent experimental data, 300 K.

For 3.75 µm < λ < 33 µm
n = [11.1 + 0.71/(1-6.5·λ-2) + 2.75/(1-2085·λ-2) - 6·10-4·λ2)]1/2,
where λ is the wavelength in µn (300 K)
 

P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade Normal incidence reflectivity versus photon energy, 300 K
 
P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade Absorption coefficient near the intrinsic absorption edge for n-InAs.
T=4.2 K
 
P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade Absorption coefficient versus photon energy for different donor concentration, 300 K
n (cm-3): 1. 3.6·1016, 2. 6·1017, 3. 3.8·1018.
 

A ground state Rydberg energy RX1= 3.5 meV

P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade Absorption coefficient versus photon energy, T = 300 K
 
P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade Free carrier absorption versus wavelength at different electron concentrations. T=300 K.
no (cm-3): 1. 3.9·1018; 2. 7.8·1017; 3. 2.5·1017; 4. 2.8·1016;
 

 

Are You Looking for an InAs Wafer?

 

PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

About Us

 

Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.

 

After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Send your inquiry directly to us (0 / 3000)

Other Products