|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||InAs Indium Arsenide Wafer||Grade:||Dummy Grade|
|Wafer Diamter:||3 Inch||Wafer Thickness:||600±25um|
|Conduction Type:||P Type||Keyword:||Single Crystal InAs Wafer|
|Secondary Flat Length:||11±1mm||Primary Flat Length:||22±2mm|
n type wafer,
P Type , InAs Substrate with (100),(111) Orientation , 3”, Dummy Grade
3" InAs Wafer Specification
|Primary Flat Length||22±2mm|
|Secondary Flat Length||11±1mm|
|Laser marking||upon request|
|Suface finish||P/E, P/P|
|Package||Single wafer container or cassette|
What is a InAs test Wafer?
Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.
Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
|Infrared refractive index||≈3.51 (300 K)|
|Radiative recombination coefficient||1.1·10-10 cm3/s|
|Long-wave TO phonon energy hνTO||≈27 meV (300 K)|
|Long-wave LO phonon energy hνLO||≈29 meV (300 K)|
|Refractive index n versus photon energy.
Solid curve is theoretical calculation.
Points represent experimental data, 300 K.
For 3.75 µm < λ < 33 µm
n = [11.1 + 0.71/(1-6.5·λ-2) + 2.75/(1-2085·λ-2) - 6·10-4·λ2)]1/2,
where λ is the wavelength in µn (300 K)
|Normal incidence reflectivity versus photon energy, 300 K
|Absorption coefficient near the intrinsic absorption edge for n-InAs.
|Absorption coefficient versus photon energy for different donor concentration, 300 K
n (cm-3): 1. 3.6·1016, 2. 6·1017, 3. 3.8·1018.
A ground state Rydberg energy RX1= 3.5 meV
|Absorption coefficient versus photon energy, T = 300 K
|Free carrier absorption versus wavelength at different electron concentrations. T=300 K.
no (cm-3): 1. 3.9·1018; 2. 7.8·1017; 3. 2.5·1017; 4. 2.8·1016;
Are You Looking for an InAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.
After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.