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N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor

N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor

N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: N Type InSb Substrate Wafer Wafer Diamter: 3 Inch
Application: Photoelectromagnetic Device Grade: Dummy Grade
Wafer Thickness: 76.2±0.4mm Keyword: InSb Wafer Indium Antimonide
High Light:

polished silicon wafer

,

insb wafer

N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor

 

 

N Type, InSb Substrate, 3”, Dummy Grade

Wafer Specification
Item Specifications
Wafer Diameter

 

3″ 76.2±0.4mm

Crystal Orientation

 

3″ (111)AorB±0.1°
 

Thickness

 

3″ 800or900±25um
 

Primary flat length

 

3″ 22±2mm
 

Secondary flat length

 

3″ 11±1mm
 

Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette

 

Electrical and Doping Specification
Conduction Type n-type n-type n-type
Dopant Tellurium Low tellurium High tellurium
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥2.5*104 ≥2.5*105 Not Specified
Carrier Concentration cm-3 (1-7)*1017 4*1014-2*1015 ≥1*1018

Optical properties of InSb Wafer

Infrared refractive index 4.0
Radiative recombination coefficient 5·10-11 cm3s-1

 

PAM-XIAMEN manufactures high purity single crystal InSb(Indium Antimonide) Wafers for photodiodes or photoelectromagnetic device, Magnetic field sensors using magnetoresistance or the Hall effect, fast transistors (in terms of dynamic switching) due to the high carrier mobility of InSb, in some of the detectors of the Infrared Array Camera on the Spitzer Space Telescope. Our standard wafer diameters range from 1 inch to 3 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer InSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

 

About Us

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

Infrared refractive index

For 120K < T < 360K dn/dT = 1.6·10-11·n

N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor Refractive index n versus photon energy, 300 K.
 
N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor Normal incidence reflectivity versus photon energy, 300 K.
 
N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor Absorption coefficient near the intrinsic absorption edge, T = 2K
 

A ground state Rydberg energy RX1= 0.5 meV.

N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor Absorption coefficient near the intrinsic absorption edge for different temperatures
 
N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor Absorption edge of pure InSb. T (K):
1. 298;
2. 5K;
 
N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor Absorption coefficient versus photon energy, T = 300 K.
 
N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor Absorption coefficient versus photon energy at different doping levels, n-InSb, T = 130 K
no (cm-3):
1. 6.6·1013;
2. 7.5·1017;
3. 2.6·1018;
4. 6·1018;
 
N Type InSb Substrate 3 Inch Dummy Grade Compound Semiconductor Absorption coefficient versus photon energy at different doping levels, p-InSb, T = 5K.
po (cm-3):
1. 5.5·1017;
2. 9·1017;
3. 1.6·1018;
4. 2.6·1018;
5. 9.4·1018;
6. 2·1019;
 

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