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Indium Phosphide Inp Substrate , 3 Inch Diameter Dummy Grade P Type Wafer

Indium Phosphide Inp Substrate , 3 Inch Diameter Dummy Grade P Type Wafer

Indium Phosphide Inp Substrate , 3 Inch Diameter Dummy Grade P Type Wafer

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Indium Phosphide Wafer Wafer Diamter: 3 Inch
Conduction Type: P Type Grade: Dummy Grade
Wafer Thickness: 350±25um Keyword: InP Substrate Wafer
Wafer Orientation: 100±0.5° Secondary Flat Length: 8±1mm
High Light:

inp wafer


test grade wafer

P Type , InP( Indium Phosphide) Substrate , 3”, Dummy Grade


Please contact our engineer team for more wafer information.

P Type, InP Substrate, 3”, Dummy Grade

3"InP Wafer Specification      
Item Specifications
Conduction Type P-type
Dopant Zinc
Wafer Diameter 3"
Wafer Orientation 100±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A >0.5x107Ω.cm
EPD <1000cm-2 <500cm-2 <1x103cm-2 <5x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette


PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties, InP wafer has higher electron mobility, higher frequency, low power consumption , higher thermal conductivity and low noise performance . PAM-XIAMEN can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .


Basic Parameters

Breakdown field ≈5·105 V cm-1
Mobility electrons ≤5400 cm2V-1s-1
Mobility holes ≤200 cm2 V-1s-1
Diffusion coefficient electrons ≤130 cm2 s-1
Diffusion coefficient holes ≤5 cm2 s-1
Electron thermal velocity 3.9·105 m s-1
Hole thermal velocity 1.7·105 m s-1



It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. The company Infinera uses indium phosphide as its major technological material for manufacturing photonic integrated circuits for the optical telecommunications industry, to enable wavelength-division multiplexing applications.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Are You Looking for an InP Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InP wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!


We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

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