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Indium Arsenide InAs Wafer 4 Inch Undoped Prime Grade Direct Bandgap Material

Indium Arsenide InAs Wafer 4 Inch Undoped Prime Grade Direct Bandgap Material

Indium Arsenide InAs Wafer 4 Inch Undoped Prime Grade Direct Bandgap Material

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Indium Arsenide Substrate Wafer Wafer Diamter: 4 Inch
Conduction Type: N Type Grade: Prime Grade
Wafer Thickness: 900±25um Keyword: Single Crystal InAs Wafer
Primary Flat Length: 16±2mm Mobility: ≥2x104cm2/V.s
High Light:

n type wafer

,

inas wafer

Undoped Indium Arsenide Substrate, 4”, Prime Grade

 

4" InAs Wafer Specification

Item Specifications
Dopant Undoped
Conduction Type N-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 900±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration 5x1016cm-3
Mobility ≥2x104cm2/V.s
EPD <5x104cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information


 

Indium Arsenide InAs Wafer 4 Inch Undoped Prime Grade Direct Bandgap Material Temperature dependences of elastic constants.
 

For T= 200K

Bulk modulus (compressibility-1) Bs= 5.81·1011 dyn/cm2
Shear modulus C'= 1.90·1011 dyn/cm2
[100] Young's modulus Yo= 5.14·1011 dyn/cm2
[100] Poisson ratio σo = 0.35

Mechanical properties, elastic constants, lattice vibrations of InAs Wafer

Basic Parameter

Bulk modulus 5.8·1011 dyn cm-2
Density 5.68 g cm-3
Hardness on the Mohs scale 3.8
Surface microhardness (using Knoop's pyramid test) 430 kg mm-2
Cleavage plane {100}
Piezoelectric constant e14= -4.5·10-2 C m-2
Electron g - factor  
298 K -17.5

Acoustic Wave Speeds

Wave propagation Direction Wave character Expression for wave speed Wave speed (in units of 105 cm/s)
[100] VL (C11/ρ )1/2 3.83
VT (C44/ρ )1/2 2.64
[100] Vl [(C11+C12+2C44)/2ρ]1/2 4.28
Vt|| Vt||=VT=(C44/ρ)1/2 2.64
Vt⊥ [(C11-C12)/2ρ]1/2 1.83
[111] Vl' [(C11+2C12+4C44)/3ρ]1/2 4.41
Vt' [(C11-C12+C44)/3ρ]1/2 2.13

 

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