|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Grade:||Prime Grade||Product Name:||Semiconductor Substrates Gallium Arsenide Wafer|
|Conduction Type:||SC/p-type With Zn Dope Available||Wafer Diamter:||3 Inch|
|Usage:||LED Application||Keyword:||GaAs Substrate Wafer|
|Optical Phonon Energy (eV):||0.035||Specific Heat:||0.35|
n type silicon wafer,
p type silicon wafer
P Type , GaAs(Gallium Arsenide) Substrate With Low EPD , 3”, Prime Grade
(GaAs)Gallium Arsenide Wafers for LED Applications
|Conduction Type||SC/p-type with Zn dope Available|
|Wafer Diamter||3, inch|
|Crystal Orientation||(100)2°/6°/15° off (110)|
|OF||EJ or US|
|Resistivity at RT||—|
|Etch Pit Density||<5000/cm2|
P/E or P/P
|Package||Single wafer container or cassette|
Properties of GaAs Crystal
|Atoms/cm3||4.42 x 1022|
|Breakdown Field||approx. 4 x 105|
|Effective Density of States in the Conduction Band, Nc (cm-3)||4.7 x 1017|
|Effective Density of States in the Valence Band, Nv (cm-3)||7.0 x 1018|
|Electron Affinity (V)||4.07|
|Energy Gap at 300K (eV)||1.424|
|Intrinsic Carrier Concentration (cm-3)||1.79 x 106|
|Intrinsic Debye Length (microns)||2250|
|Intrinsic Resistivity (ohm-cm)||108|
|Lattice Constant (angstroms)||5.6533|
|Linear Coefficient of Thermal Expansion,||6.86 x 10-6|
|ΔL/L/ΔT (1/deg C)|
|Melting Point (deg C)||1238|
|Minority Carrier Lifetime (s)||approx. 10-8|
|Optical Phonon Energy (eV)||0.035|
|Phonon Mean Free Path (angstroms)||58|
|Thermal Conductivity at 300 K||0.46|
|Thermal Diffusivity (cm2/sec)||0.24|
|Vapor Pressure (Pa)||100 at 1050 deg C;|
|1 at 900 deg C|
What is GaAs wafer?
GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.
What is the Optical properties of GaAs Wafer?
|Infrared refractive index||3.3|
|Radiative recombination coefficient||7·10-10 cm3/s|
Infrared refractive index
n = k1/2 = 3.255·(1 + 4.5·10-5T)
for 300 K n= 3.299
Long-wave TO phonon energy
hνTO = 33.81·(1 - 5.5·10-5 T) (meV)
for 300 K hνTO = 33.2 meV
Long-wave LO phonon energy
hνLO= 36.57·(1 - 4·10-5 T) (meV)
for 300 K hνLO = 36.1 meV
|Refractive index n versus photon energy for a high-purity GaAs.(no~5·1013 cm-3).
Solid curve is deduced from two-beam reflectance measurements at 279 K. Dark circles are obtained from refraction measurements. Light circles are calculated from Kramers-Kronig analysis
|Normal incidence reflectivity versus photon energy.
|Intrinsic absorption coefficient near the intrinsic absorption edge for different temperatures.
A ground state Rydberg energy RX1= 4.2 meV
|Intrinsic absorption edge at 297 K at different doping levels. n-type doping
|Intrinsic absorption edge at 297 K at different doping levels. p-type doping
|The absorption coefficient versus photon energy from intrinsic edge to 25 eV.
|Free carrier absorption versus wavelength at different doping levels, 296 K
Conduction electron concentrations are:
1. 1.3·1017cm-3; 2. 4.9·1017cm-3; 3. 1018cm-3; 4. 5.4·1018cm-3
|Free carrier absorption versus wavelength at different temperatures.
no = 4.9·1017cm-3
Temperatures are: 1. 100 K; 2. 297 K; 3. 443 K.
At 300 K
For λ~2 µm α=6·10-18 no (cm-1) (no - in cm-1)
For λ > 4µm and 1017<no<1018cm-3α ≈ 7.5·10-20no·λ3 (cm-1) (no - in cm-3, λ - µm)
Are You Looking for GaAs substrate?
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