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GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer

GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer

GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Grade: Prime Grade Product Name: Semiconductor Substrates Gallium Arsenide Wafer
Conduction Type: SC/p-type With Zn Dope Available Wafer Diamter: 3 Inch
Usage: LED Application Keyword: GaAs Substrate Wafer
Optical Phonon Energy (eV): 0.035 Specific Heat: 0.35
High Light:

n type silicon wafer

,

p type silicon wafer

P Type , GaAs(Gallium Arsenide) Substrate With Low EPD , 3”, Prime Grade

 

(GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications  
Conduction Type SC/p-type with Zn dope Available
Growth Method VGF
Dopant Mg
Wafer Diamter 3, inch
Crystal Orientation (100)2°/6°/15° off (110)
OF EJ or US
Carrier Concentration E19
Resistivity at RT
Mobility

1500~3000cm2/V.sec

 

Etch Pit Density <5000/cm2
Laser Marking

upon request

 

Surface Finish

P/E or P/P

 

Thickness

220~450um

 

Epitaxy Ready Yes
Package Single wafer container or cassette

 

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C

 

 
Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

 

What is GaAs wafer?

 

GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.

 

What is the Optical properties of GaAs Wafer?

Infrared refractive index 3.3
Radiative recombination coefficient 7·10-10 cm3/s

 

Infrared refractive index

n = k1/2 = 3.255·(1 + 4.5·10-5T)
for 300 K n= 3.299

Long-wave TO phonon energy

hνTO = 33.81·(1 - 5.5·10-5 T) (meV)
for 300 K hνTO = 33.2 meV

Long-wave LO phonon energy

hνLO= 36.57·(1 - 4·10-5 T) (meV)
for 300 K hνLO = 36.1 meV

 

GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer Refractive index n versus photon energy for a high-purity GaAs.(no~5·1013 cm-3).
Solid curve is deduced from two-beam reflectance measurements at 279 K. Dark circles are obtained from refraction measurements. Light circles are calculated from Kramers-Kronig analysis
 
GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer Normal incidence reflectivity versus photon energy.
.
GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer Intrinsic absorption coefficient near the intrinsic absorption edge for different temperatures.
 

A ground state Rydberg energy RX1= 4.2 meV

GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer Intrinsic absorption edge at 297 K at different doping levels. n-type doping
 
GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer Intrinsic absorption edge at 297 K at different doping levels. p-type doping
 
GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer The absorption coefficient versus photon energy from intrinsic edge to 25 eV.
 
GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer Free carrier absorption versus wavelength at different doping levels, 296 K
Conduction electron concentrations are:
1. 1.3·1017cm-3; 2. 4.9·1017cm-3; 3. 1018cm-3; 4. 5.4·1018cm-3
GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer Free carrier absorption versus wavelength at different temperatures.
no = 4.9·1017cm-3
Temperatures are: 1. 100 K; 2. 297 K; 3. 443 K.

At 300 K

For λ~2 µm α=6·10-18 no (cm-1) (no - in cm-1)
For λ > 4µm and 1017<no<1018cm-3α ≈ 7.5·10-20no·λ3 (cm-1) (no - in cm-3, λ - µm)

 

Are You Looking for GaAs substrate?

 

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

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