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Epi Ready Gallium Arsenide Substrate Semi Insulating 6 Inch Prime Grade

Epi Ready Gallium Arsenide Substrate Semi Insulating 6 Inch Prime Grade

Epi Ready Gallium Arsenide Substrate Semi Insulating 6 Inch Prime Grade

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Prime Grade GaAs Wafer Keyword: Gallium Arsenide Substrate Wafer
Wafer Diamter: 6 Inch Grade: Prime Grade
Conduction Type: Semi-insulating Usage: Microelectronics
Thickness(µm): 675±25 Bow(µm): N/A
High Light:

n type silicon wafer

,

gaas wafer

Semi-Insulating , Epi-Ready Gallium Arsenide Substrate, 6”, Prime Grade

 

(6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type

 

Semi-insulating

 
Growth Method VGF  
Dopant Undoped  
Type N  
Diamater(mm) 150±0.25  
Orientation

 

(100)0°±3.0°

 
NOTCH Orientation 〔010〕±2°  
NOTCH Deepth(mm) (1-1.25)mm 89°-95°  
Carrier Concentration

 

N/A

 
Resistivity(ohm.cm >1.0×107 or 0.8-9 x10-3  
Mobility(cm2/v.s) N/A  
Dislocation

 

N/A

 
Thickness(µm)

 

675±25

 
Edge Exclusion for Bow and Warp(mm) N/A  
Bow(µm) N/A  
Warp(µm)

 

≤20.0

 
TTV(µm) ≤10.0  
TIR(µm) ≤10.0  
LFPD(µm)

 

N/A

 
Polishing P/P Epi-Ready  

 

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C

 

Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

 

PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafer, both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications. PAM-XIAMEN can produce wide range grades: prime grade, test grade, and optical grade. Please contact our engineer team for more wafer information.

 

What is the GaAs Process?

GaAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

 

What is the Thermal properties of GaAs Wafer?

Bulk modulus 7.53·1011 dyn cm-2
Melting point 1240 °C
Specific heat 0.33 J g-1°C -1
Thermal conductivity 0.55 W cm-1 °C -1
Thermal diffusivity 0.31cm2s-1
Thermal expansion, linear 5.73·10-6 °C -1

 

Epi Ready Gallium Arsenide Substrate Semi Insulating 6 Inch Prime Grade Temperature dependence of thermal conductivity
n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018;
p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019.
 
Epi Ready Gallium Arsenide Substrate Semi Insulating 6 Inch Prime Grade Temperature dependence of thermal conductivity (for high temperature)
n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4. 8·1018;
p-type sample, po (cm-3): 5. 6·1019.
 
Epi Ready Gallium Arsenide Substrate Semi Insulating 6 Inch Prime Grade Temperature dependence of specific heat at constant pressure Ccl= 3kbN = 0.345 J g-1°C -1.
N is the number of atoms in 1 g og GaAs.
Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K.
 
Epi Ready Gallium Arsenide Substrate Semi Insulating 6 Inch Prime Grade Temperature dependence of linear expansion coefficient α
 

 

Melting point Tm=1513 K
For 0 < P < 45 kbar Tm= 1513 - 3.5P (P in kbar)
Saturated vapor pressure (in Pascals)
1173 K 1
1323 K 100

 

Are You Looking for GaAs Wafer?

 

PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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