Home ProductsIndium Arsenide Wafer

Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial Application

Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial Application

Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial Application

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Contact Now
Detailed Product Description
Product Name: Dummy Grade InAs Wafer Wafer Diamter: 3 Inch
Conduction Type: N Type Grade: Dummy Grade
Wafer Thickness: 600±25um Keyword: Single Crystal Indium Arsenide Wafer
Carrier Concentration: 5x1016cm-3 Mobility: ≥2x104cm2/V.s
High Light:

n type wafer

,

inas wafer

Undoped InAs Semiconductor Wafer , 3”, Dummy Grade
 

What is InAs wafer?

 
InAs crystal has high electron mobility and mobility ratio (μ E / μ H = 70), low magneto resistance effect and low resistance temperature coefficient. It is an ideal material for manufacturing Hall devices and magneto resistance devices. The emission wavelength of InAs is 3.34 μ M. in GaAs B, InAsPSb and inasb multiple epitaxial materials with lattice matching can be grown on InAs substrate. Lasers and detectors for optical fiber communication at 2-4 μ M band can be manufactured.
 
3" InAs Wafer Specification

ItemSpecifications
DopantUndoped
Conduction TypeN-type
Wafer Diameter3"
Wafer Orientation(100)±0.5°
Wafer Thickness600±25um
Primary Flat Length22±2mm
Secondary Flat Length11±1mm
Carrier Concentration5x1016cm-3
Mobility≥2x104cm2/V.s
EPD<5x104cm-2
TTV<12um
BOW<12um
WARP<15um
Laser markingupon request
Suface finishP/E, P/P
Epi readyyes
PackageSingle wafer container or cassette

Electrical properties of InAs Wafer

Basic Parameters

Breakdown field≈4·104 V cm-1
Mobility of electrons≤4·104 cm2V-1s-1
Mobility of holes≤5·102 cm2 V-1s-1
Diffusion coefficient of electrons≤103 cm2s-1
Diffusion coefficient of holes≤13 cm2 s-1
Electron thermal velocity7.7·105 m s-1
Hole thermal velocity2·105 m s-1

Mobility and Hall Effect

Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial ApplicationElectron Hall mobility versus temperature for different electron concentration:
full triangles no= 4·1015 cm-3,
circles no= 4·1016cm-3,
open triangles no= 1.7·1016cm-3.
Solid curve-calculation for pure InAs.
 
Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial ApplicationElectron Hall mobility versus electron concentration. T = 77 K.
 
Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial ApplicationElectron Hall mobility versus electron concentration T = 300 K
 
Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial Application

Electron Hall mobility (R·σ) in compensated material

Curven cm-3Na+Nd cm-3θ=Na/Nd
18.2·10163·10170.58
23.2·10176.1·10180.9
35.1·10163.2·10180.96
43.3·10167.5·10170.91
57.6·10153.4·10170.95
66.4·10153.8·10170.96
73.3·10153.9·10170.98

 

Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial ApplicationElectron Hall mobility versus transverse magnetic field, T = 77 K.
Nd (cm-3):
1. 1.7·1016;
2. 5.8·1016.
 

At T = 300 K the electron Hall factor in pure n-InAs rH ~1.3.

Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial ApplicationHole Hall mobility (R·σ) versus temperature for different acceptor densities.
Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018.
 
Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial ApplicationHall coefficient versus temperature for different acceptor densities.
Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018.
 

 

Recombination Parameters

Pure n-type material (no =2·10-15cm-3)
The longest lifetime of holesτp ~ 3·10-6 s
Diffusion length LpLp ~ 10 - 20 µm.
Pure p-type material
The longest lifetime of electronsτn ~ 3·10-8 s
Diffusion length LnLn ~ 30 - 60 µm

 

Characteristic surface recombination rates (cm s-1) 102 - 104.

Radiative recombination coefficient

77 K1.2·10-9 cm3s-1
298 K1.1·10-10 cm3s-1

Auger coefficient

300 K2.2·10-27cm3s-1

 
About Us
 
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
 
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.
 
 

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Send your inquiry directly to us (0 / 3000)

Other Products