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3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type

3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type

3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: InSb Substrate Wafer Wafer Diamter: 3 Inch
Conduction Type: N Type Grade: Prime Grade
Wafer Thickness: 76.2±0.4mm Keyword: InSb Wafer Indium Antimonide
High Light:

polished silicon wafer

,

insb wafer

N Type , InSb Substrate , 3”, Prime Grade -Semiconductor Wafer Manufacturing

 

N Type, InSb Substrate, 3”, Prime Grade

Wafer Specification
Item Specifications
Wafer Diameter

 

3″ 76.2±0.4mm

Crystal Orientation

 

3″ (111)AorB±0.1°
 

Thickness

 

3″ 800 or 900±25um
 

Primary flat length

 

3″ 22±2mm
 

Secondary flat length

 

3″ 11±1mm
 

Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette

 

Electrical and Doping Specification
Conduction Type n-type n-type n-type
Dopant Tellurium Low tellurium High tellurium
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥2.5*104 ≥2.5*105 Not Specified
Carrier Concentration cm-3 (1-7)*1017 4*1014-2*1015 ≥1*1018

Electrical properties of InSb Wafer

Basic Parameters


Mobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

 

PAM-XIAMEN offers InSb wafer – Indium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths.

Basic Parameters

Breakdown field ≈103 V cm-1
Mobility Electrons ≤7.7·104 cm2V-1s-1
Mobility Holes ≤850 cm2V-1s-1
Diffusion coefficient Electrons ≤2·103 cm2s-1
Diffusion coefficient Holes ≤22 cm2s-1
Electron thermal velocity 9.8·105 m s-1
Hole thermal velocity 1.8·105 m s-1

 

 

Maximal electron mobility for pure n-InSb
77 K 1.2·106 cm2V-1s-1
300 K 7.7·104 cm2V-1s-1
Maximal electron mobility for InSb grown on GaAs substrate
77K 1.5·105 cm2V-1s-1 (no= 2.2·1015 cm-3)
300 K 7.0·104 cm2V-1s-1 (no= 2.0·1016 cm-3)
Maximal electron mobility for InSb grown on InP substrate
77 K 1.1·105 cm2V-1s-1
300 K 7.0·104 cm2V-1s-1

 

3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type Hole Hall mobility versus temperature for different hole concentrations.
po (cm-3):
1. 8·1014;
2. 3.15·1018;
3. 2.5·1019;
 

For pure p-InSb at T > 60K:
µpH≈850(T/300)-1.8 (cm2V-1s-1)

3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type Hall mobility versus hole concentrations:
1. 77 K
2. 290K
3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type The hole Hall factor versus carrier concentration, 77 K
 

Transport Properties in High Electric Fields

3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type Field dependence of the electron drift velocity, 77 K.
Solid lines is the Monte Carlo calculation.
Points are experimental data.
 
3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type Field dependence of the electron drift velocity, 77 K.
Solid lines is the Monte Carlo calculation.
Points are experimental data.
 
3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type Fraction of electrons in the L-valley as a function of electric field F, 77K
 
3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type Frequency dependence of the efficiency in LSA mode
Fo = F + F1sin(2π·ft):
Fo= 2.5 kV cm-1
 

Impact Ionization

3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type The dependence of generation rate for electrons gn versus electric field F, 300 K
 

For 300 K, for 30 V/cm < F < 300 V/cm:

gn(F) = 126·F2exp(F/160) (s-1),

where F is in V cm-1.

3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type The dependence of generation rate for electrons gn versus electric field F, 77 K
 
3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type The dependence of ionization rates for electrons αi versus the electric field F, T=78 K
 
3 Inch Indium Antimonide Wafer Prime Grade Semiconductor Wafer N Type The dependence of generation rate for holes gp versus the electric field F, T =77K
 

 

Are You Looking for an InSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

About Us

 

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After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.

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