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3 Inch Gallium Arsenide Wafer Dummy Grade VGF Method SC Conduction Type

3 Inch Gallium Arsenide Wafer Dummy Grade VGF Method SC Conduction Type

3 Inch Gallium Arsenide Wafer Dummy Grade VGF Method SC Conduction Type

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Grade: Dummy Grade Product Name: P Type GaAs Substrate Wafer
Wafer Diamter: 3 Inch Conduction Type: SC/p-type With Zn Dope Available
Usage: LED Application Keyword: GaAs Wafer
Surface Finish: P/E Or P/P Epitaxy Ready: Yes
High Light:

n type silicon wafer

,

gaas wafer

P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing

 

(GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications  
Conduction Type SC/p-type with Zn dope Available
Growth Method VGF
Dopant Mg
Wafer Diamter 3, inch
Crystal Orientation (100)2°/6°/15° off (110)
OF EJ or US
Carrier Concentration E19
Resistivity at RT
Mobility

1500~3000cm2/V.sec

 

Etch Pit Density <5000/cm2
Laser Marking

upon request

 

Surface Finish

P/E or P/P

 

Thickness

220~450um

 

Epitaxy Ready Yes
Package Single wafer container or cassette

 

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C
 
Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

What is the Thermal properties of GaAs Wafer?

Bulk modulus 7.53·1011 dyn cm-2
Melting point 1240 °C
Specific heat 0.33 J g-1°C -1
Thermal conductivity 0.55 W cm-1 °C -1
Thermal diffusivity 0.31cm2s-1
Thermal expansion, linear 5.73·10-6 °C -1

 

3 Inch Gallium Arsenide Wafer Dummy Grade VGF Method SC Conduction Type Temperature dependence of thermal conductivity
n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018;
p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019.
 
3 Inch Gallium Arsenide Wafer Dummy Grade VGF Method SC Conduction Type Temperature dependence of thermal conductivity (for high temperature)
n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4. 8·1018;
p-type sample, po (cm-3): 5. 6·1019.
 
3 Inch Gallium Arsenide Wafer Dummy Grade VGF Method SC Conduction Type Temperature dependence of specific heat at constant pressure Ccl= 3kbN = 0.345 J g-1°C -1.
N is the number of atoms in 1 g og GaAs.
Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K.
 
3 Inch Gallium Arsenide Wafer Dummy Grade VGF Method SC Conduction Type Temperature dependence of linear expansion coefficient α
 

 

Melting point Tm=1513 K
For 0 < P < 45 kbar Tm= 1513 - 3.5P (P in kbar)
Saturated vapor pressure (in Pascals)
1173 K 1
1323 K 100

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

 

About Us

 

Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.

 

After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.

Contact Details
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