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2 Inch Indium Antimonide Wafer , Undoped Polished Epi Ready Wafer

2 Inch Indium Antimonide Wafer , Undoped Polished Epi Ready Wafer

2 Inch Indium Antimonide Wafer , Undoped Polished Epi Ready Wafer

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Feature: High Purity Package: Epi-Ready,Single Wafer Container Or CF Cassette
Product Name: Undoped InSb Wafer Wafer Diamter: 2″50.5±0.5mm
Wafer Thickness: 2″625±25um Keyword: Polished Wafer Indium Antimonide Wafer
Surface Finish: P/E, P/P EPD Cm-2: ≤50
High Light:

polished silicon wafer


as cut wafer

Undoped InSb Wafer, 2”, Polished Wafer, Epi Ready


Undoped InSb Wafer, 2”, Polished Wafer, Epi Ready

Wafer Specification
Item Specifications
Wafer Diameter



Crystal Orientation






Primary flat length



Secondary flat length



Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette


PAM-XIAMEN manufactures high purity single crystal InSb(Indium Antimonide) Wafers for photodiodes or photoelectromagnetic device, Magnetic field sensors using magnetoresistance or the Hall effect, fast transistors (in terms of dynamic switching) due to the high carrier mobility of InSb, in some of the detectors of the Infrared Array Camera on the Spitzer Space Telescope. Our standard wafer diameters range from 1 inch to 3 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer InSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies. 


Electrical and Doping Specification
Conduction Type n-type
Dopant Undoped
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥4*105
Carrier Concentration cm-3 5*1013-3*1014


Basic Parameters at 300 K of InSb Wafer


Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 2.94·1022
Debye temperature 160 K
Density 5.77 g cm-3
Dielectric constant
static 16.8
high frequency 15.7
Effective electron mass 0.014mo
Effective hole masses mh 0.43mo
Effective hole masses mlp 0.015mo
Electron affinity 4.59 eV
Lattice constant 6.479 A
Optical phonon energy

0.025 eV




7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.


Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.


About Us


Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.


We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.


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