|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Conduction Type:||Semi-Insulating||Thickness:||350 ±25 μm 430±25μm|
|Item:||PAM-FS-GAN-50-SI||Other Name:||Gallium Nitride Substrate|
|Dimension:||50.8 ±1 Mm||Product Name:||SI-GaN GaN Substrates|
|TTV:||≤ 15 μm||BOW:||-20 μm ≤ BOW ≤ 20 μm|
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2 Inch Freestanding Si-GaN GaN(Gallium Nitride) Substrates And Wafers
2inch Freestanding Si-GaN GaN Substrates
|Dimension||50.8 ±1 mm|
|Thickness||350 ±25 μm 430±25μm|
|Orientation||C plane (0001) off angle toward M-axis 0.35 ±0.15°|
|Orientation Flat||(1-100) 0 ±0.5°, 16 ±1 mm|
|Secondary Orientation Flat||(11-20) 0 ±3°, 8 ±1 mm|
|TTV||≤ 15 μm|
|BOW||-20 μm ≤ BOW ≤ 20 μm|
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
|Dislocation Density||From 1 x 105 to 5 x 10 6cm -2(calculated by CL)*|
|Macro Defect Density||< 2 cm-2|
|Useable Area||> 90% (edge and macro defects exclusion)|
|Package||each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room|
Wireless Base Stations: RF power transistors
Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs
Heat Sensors: Pyro-electric detectors
Power Conditioning: Mixed signal GaN/Si Integration
Automotive Electronics: High temperature electronics
Power Transmission Lines: High voltage electronics
Frame Sensors: UV detectors
Solar Cells:GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride
(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important new applications and growth market for GaN substrate wafers.
Ideal for HEMTs, FETs
GaN Schottky diode project: We accept custom spec of Schottky diodes fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types.
Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au.
|Energy gaps, Eg||3.28 eV||0 K||Bougrov et al. (2001)|
|Energy gaps, Eg||3.2 eV||300 K|
|Electron affinity||4.1 eV||300 K|
|Energy separation between Γ valley and X valleys EΓ||1.4 eV||300 K||Bougrov et al. (2001)|
|Energy separation between Γ valley and L valleys EL||1.6 ÷ 1.9 eV||300 K|
|Effective conduction band density of states||1.2 x 1018 cm-3||300 K|
|Energy of spin-orbital splitting Eso||0.02 eV||300 K|
|Effective valence band density of states||4.1 x 1019 cm-3||300 K|
|Band structure of zinc blende(cubic) GaN. Important minima of the conduction band and maxima of the valence band.
300K; Eg=3.2 eVeV; EX= 4.6 eV; EL= 4.8-5.1 eV; Eso = 0.02 eV
For details see Suzuki, Uenoyama & Yanase (1995) .
|Brillouin zone of the face centered cubic lattice, the Bravais lattice of the diamond and zincblende structures.|
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