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2 Inch Gallium Arsenide Wafer Low Etch Pit Density Prime Grade Epi Ready

2 Inch Gallium Arsenide Wafer Low Etch Pit Density Prime Grade Epi Ready

2 Inch Gallium Arsenide Wafer Low Etch Pit Density Prime Grade Epi Ready

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Wafer Diamter: 2 Inch Product Name: GaAs Wafer
Conduction Type: SC/p-type With Zn Dope Available Grade: Prime Grade
Usage: LED Application Keyword: Gallium Arsenide Wafer
Density (g/cm3): 5.32 Electron Affinity (V): 4.07
High Light:

n type silicon wafer

,

gaas wafer

P Type , GaAs Wafer With Low Etch Pit Density , 2”, Prime Grade , Epi Ready

 

(GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications  
Conduction Type SC/p-type with Zn dope Available
Growth Method VGF
Dopant Mg
Wafer Diamter 2, inch
Crystal Orientation (100)2°/6°/15° off (110)
OF EJ or US
Carrier Concentration E19
Resistivity at RT
Mobility

1500~3000cm2/V.sec

 

Etch Pit Density <5000/cm2
Laser Marking

upon request

 

Surface Finish

P/E or P/P

 

Thickness

220~450um

 

Epitaxy Ready Yes
Package Single wafer container or cassette

 

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C

 

Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

 

What is a GaAs Test Wafer?

Most GaAs test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

 

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications. We are always dedicated to improve the quality of currently substates and develop large size substrates.

What is the Electrical properties of GaAs Wafer

Breakdown field ≈4·105 V/cm
Mobility electrons ≤8500 cm2 V-1s-1
Mobility holes ≤400 cm2 V-1s-1
Diffusion coefficient electrons ≤200 cm2/s
Diffusion coefficient holes ≤10 cm2/s
Electron thermal velocity 4.4·105 m/s
Hole thermal velocity 1.8·105m/s

 

Recombination Parameter

Pure n-type material (no ~ 1014cm-3)  
The longest lifetime of holes τp ~3·10-6 s
Diffusion length Lp = (Dp·τp)1/2 Lp ~30-50 µm.
Pure p-type material  
(a)Low injection level  
The longest lifetime of electrons τn ~ 5·10-9 s
Diffusion length Ln = (Dn·τ n)1/2 Ln ~10 µm
(b) High injection level (filled traps)  
The longest lifetime of electrons τ ~2.5·10-7 s
Diffusion length Ln Ln ~ 70 µm

 

Surface recombination velocity versus doping density

Different experimental points correspond to different surface treatment methods.

Radiative recombination coefficient

90 K 1.8·10-8cm3/s
185 K 1.9·10-9cm3/s
300 K 7.2·10-10cm3/s

Auger coefficient

300 K ~10-30cm6/s
500 K ~10-29cm6/s

 

Are You Looking for GaAs Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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