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China Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type factory

Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type

Undoped Indium Arsenide Substrate, 4, Test Grade What is the InAs Process? InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might ... Read More
2020-03-23 15:57:02
China Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade factory

Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade

Undoped InAs Semiconductor Wafer , 3, Prime Grade 3" InAs Wafer Specification Item Specifications Dopant Undoped Conduction Type N-type Wafer Diameter 3" Wafer Orientation (100)0.5 Wafer Thickness 60025um ... Read More
2020-03-23 15:57:02
China Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial Application factory

Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial Application

Undoped InAs Semiconductor Wafer , 3, Dummy Grade What is InAs wafer? InAs crystal has high electron mobility and mobility ratio ( E / H = 70), low magneto resistance effect and low resistance temperature ... Read More
2020-03-23 15:57:02
China Indium Arsenide InAs Wafer 4 Inch Undoped Prime Grade Direct Bandgap Material factory

Indium Arsenide InAs Wafer 4 Inch Undoped Prime Grade Direct Bandgap Material

Undoped Indium Arsenide Substrate, 4, Prime Grade 4" InAs Wafer Specification Item Specifications Dopant Undoped Conduction Type N-type Wafer Diameter 4" Wafer Orientation (100)0.5 Wafer Thickness 90025um ... Read More
2020-03-23 15:57:02
China P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade factory

P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade

P Type , InAs Substrate with (100),(111) Orientation , 3, Dummy Grade 3" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 3" Wafer Orientation (100)0.5 Wafer ... Read More
2020-03-23 15:57:02
China GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer factory

GaAs Gallium Arsenide Substrate With Low EPD Prime Grade 3 Inch P Type Wafer

P Type , GaAs(Gallium Arsenide) Substrate With Low EPD , 3, Prime Grade (GaAs)Gallium Arsenide Wafers for LED Applications Item Specifications Conduction Type SC/p-type with Zn dope Available Growth Method VGF ... Read More
2020-03-23 15:57:02
China Off Axis SiC 4H N Type Wafer Research Grade Nitrogen Doped Double Face Polished factory

Off Axis SiC 4H N Type Wafer Research Grade Nitrogen Doped Double Face Polished

Off-Axis 4H N Type SiC Wafer Material, Research Grade , 10mm x 10mm SiC Crystal Structure SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently ... Read More
2020-03-23 15:56:02
China Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type factory

Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type

P Type , Zn-doped Single Crystal InAs Wafer , 2, Test Grade 2" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 2" Wafer Orientation (100)0.5 Wafer Thickness ... Read More
2020-03-23 15:57:02
China Test Grade InAs Indium Arsenide Wafer 4 Inch P Type High Purity Research Use factory

Test Grade InAs Indium Arsenide Wafer 4 Inch P Type High Purity Research Use

P Type , InAs (Indium Arsenide) Wafer , 4, Test Grade 4" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 4" Wafer Orientation (100)0.5 Wafer Thickness 90025um ... Read More
2020-03-23 15:57:02
China 4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade factory

4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade

P Type , InAs (Indium Arsenide) Wafer , 4, Prime Grade 4" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 4" Wafer Orientation (100)0.5 Wafer Thickness 90025um ... Read More
2020-03-23 15:57:02
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