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China Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial Application factory

Dummy Grade InAs Wafer Semiconductor 3 Inch Optical Grade Commercial Application

Undoped InAs Semiconductor Wafer , 3, Dummy Grade What is InAs wafer? InAs crystal has high electron mobility and mobility ratio ( E / H = 70), low magneto resistance effect and low resistance temperature ... Read More
2020-03-23 15:57:02
China Indium Arsenide InAs Wafer 4 Inch Undoped Prime Grade Direct Bandgap Material factory

Indium Arsenide InAs Wafer 4 Inch Undoped Prime Grade Direct Bandgap Material

Undoped Indium Arsenide Substrate, 4, Prime Grade 4" InAs Wafer Specification Item Specifications Dopant Undoped Conduction Type N-type Wafer Diameter 4" Wafer Orientation (100)0.5 Wafer Thickness 90025um ... Read More
2020-03-23 15:57:02
China Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type factory

Single Crystal InAs Indium Arsenide Wafer 3 Inch Prime Grade P Type

P Type , Single Crystal InAs Substrate , 3, Prime Grade 3" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 3" Wafer Orientation (100)0.5 Wafer Thickness 60025um ... Read More
2020-03-23 15:57:02
China Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type factory

Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type

P Type , Zn-doped Single Crystal InAs Wafer , 2, Test Grade 2" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 2" Wafer Orientation (100)0.5 Wafer Thickness ... Read More
2020-03-23 15:57:02
China P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade factory

P Type InAs Substrate With 100 111 Orientation 3 Inch Dummy Grade

P Type , InAs Substrate with (100),(111) Orientation , 3, Dummy Grade 3" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 3" Wafer Orientation (100)0.5 Wafer ... Read More
2020-03-23 15:57:02
China Prime Grade Indium Arsenide Wafer Zn Doped 2 Inch InAs Epi Ready Wafer factory

Prime Grade Indium Arsenide Wafer Zn Doped 2 Inch InAs Epi Ready Wafer

P Type , Zn-doped InAs Wafer , 2, Prime Grade , Epi Ready 2" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 2" Wafer Orientation (100)0.5 Wafer Thickness 50025um ... Read More
2020-03-23 15:57:02
China Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type factory

Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type

Undoped Indium Arsenide Substrate, 4, Test Grade What is the InAs Process? InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might ... Read More
2020-03-23 15:57:02
China Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade factory

Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade

Undoped InAs Semiconductor Wafer , 3, Prime Grade 3" InAs Wafer Specification Item Specifications Dopant Undoped Conduction Type N-type Wafer Diameter 3" Wafer Orientation (100)0.5 Wafer Thickness 60025um ... Read More
2020-03-23 15:57:02
China Test Grade InAs Indium Arsenide Wafer 4 Inch P Type High Purity Research Use factory

Test Grade InAs Indium Arsenide Wafer 4 Inch P Type High Purity Research Use

P Type , InAs (Indium Arsenide) Wafer , 4, Test Grade 4" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 4" Wafer Orientation (100)0.5 Wafer Thickness 90025um ... Read More
2020-03-23 15:57:02
China 4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade factory

4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade

P Type , InAs (Indium Arsenide) Wafer , 4, Prime Grade 4" InAs Wafer Specification Item Specifications Dopant Zinc Conduction Type P-type Wafer Diameter 4" Wafer Orientation (100)0.5 Wafer Thickness 90025um ... Read More
2020-03-23 15:57:02
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