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China Si Type GaN Substrate Freestanding For Iii Nitride LDs High Speed Demand factory

Si Type GaN Substrate Freestanding For Iii Nitride LDs High Speed Demand

10*10mm2 Si-GaN Freestanding GaN Substrate For Iii-Nitride LDs 10*10mm2 Si-GaN Freestanding GaN Substrate The growing demand for high-speed, high-temperature and high power-handling capabilities has made the ... Read More
2020-03-23 15:56:02
China 2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure factory

2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure

2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure 2inch Freestanding N-GaN GaN Substrates The growing demand for high-speed, high-temperature and high power-handling capabilities has ... Read More
2020-03-23 15:56:02
China 2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode factory

2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode

2 Inch Free Standing U-GaN Bulk GaN Substrates,Epi-Ready Grade For GaN Laser Diode GaN is a very hard (122 GPa, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal ... Read More
2020-03-23 15:56:02
China 4 Inch Silicon Wafer Semi Insulating Silicon Substrate Research Grade factory

4 Inch Silicon Wafer Semi Insulating Silicon Substrate Research Grade

4H Semi-Insulating Silicon Substrate, Research Grade,10mm x 10mm Please contact us for more information SILICON CARBIDE MATERIAL PROPERTIES Polytype Single Crystal 4H Single Crystal 6H Lattice Parameters a=3... Read More
2020-03-23 15:56:02
China 6H Silicon Carbide Wafer SiC Substrate Production Grade Semi Insulating factory

6H Silicon Carbide Wafer SiC Substrate Production Grade Semi Insulating

6H Semi-Insulating SiC Substrate, Production Grade,10mm x 10mm Here shows detail specification: SILICON CARBIDE MATERIAL PROPERTIES Polytype Single Crystal 4H Single Crystal 6H Lattice Parameters a=3.076 a=3... Read More
2020-03-23 15:56:02
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