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epitaxial silicon wafer

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China 6 Inch Epitaxial Silicon Wafer Substrate Thickness 290±20µM Thickness 10-15μM factory

6 Inch Epitaxial Silicon Wafer Substrate Thickness 290±20µM Thickness 10-15μM

6" Silicon Epitaxial Wafer Substrate Thickness 29020m / Resistivity 0.008-0.025cm , Epi Layer Thickness 10-15m 6" Silicon Epitaxial Wafer Substrate Thickness 29020m / Resistivity 0.008-0.025cm, Epi Layer ... Read More
2020-03-23 15:37:55
China N Type Silicon Wafer 2 Inch FZ Phosphorus Doped Orientation 100 Prime Grade factory

N Type Silicon Wafer 2 Inch FZ Phosphorus Doped Orientation 100 Prime Grade

2 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 2" Type Conduction Type Orientation Diameter(mm) Resistivity(cm) High resistance N&P & 50 - 300 >1000 NTD N & 50 - 300 30-800 CFZ N&P ... Read More
2020-03-23 15:47:46
China Semiconductor Silicon Wafer FZ N Type 3 Inch Crystal Growth Epitaxy Technology factory

Semiconductor Silicon Wafer FZ N Type 3 Inch Crystal Growth Epitaxy Technology

3 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 3" 3inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 3"TypeConduction TypeOrientationDiameter(mm)Resistivity... Read More
2020-03-23 15:51:49
China Monocrystalline 3 Inch Silicon Wafer FZ N Type Phosphorus Doped SEMI Standard factory

Monocrystalline 3 Inch Silicon Wafer FZ N Type Phosphorus Doped SEMI Standard

3 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 3" 3inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 3"TypeConduction TypeOrientationDiameter(mm)Resistivity... Read More
2020-03-23 15:52:39
China Intrinsic Undoped Silicon Epi Wafer 2 Inch FZ  For Integrated Circuits factory

Intrinsic Undoped Silicon Epi Wafer 2 Inch FZ For Integrated Circuits

2 Inch Silicon Wafer FZ Intrinsic Undoped Orientation 100 Prime Grade 2" 2inch Silicon Wafer FZ Intrinsic Undoped Orientation 100 Prime Grade 2"TypeConduction TypeOrientationDiameter(mm)Resistivity(cm)High ... Read More
2020-03-23 15:54:13
China P Type 2 Inch Silicon Epi Wafer Boron Doped Monocrystalline Wafer factory

P Type 2 Inch Silicon Epi Wafer Boron Doped Monocrystalline Wafer

2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 2" 2inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 2" Type Conduction Type Orientation Diameter(mm) Resistivity(cm) ... Read More
2020-03-23 15:51:15
China Silicon Float Zone Wafer High Resistivity Good Lifetime 150±0.5 Mm Diameter factory

Silicon Float Zone Wafer High Resistivity Good Lifetime 150±0.5 Mm Diameter

Product Description Float-Zone Silicon Wafer With High-Resistivity And Good Lifetime. CFZ-Silicon The monocrystalline-silicon is produced with the combination of Czochralski and float-zone processes, and has ... Read More
2020-03-23 15:48:18
China Boron Doped Silicon Wafer FZ P Type Prime Grade Power Way 2 Inch Wafer factory

Boron Doped Silicon Wafer FZ P Type Prime Grade Power Way 2 Inch Wafer

2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2" 2inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2"TypeConduction TypeOrientationDiameter(mm)Resistivity(cm)High ... Read More
2020-03-23 15:49:26
China 3 Inch Silicon Epitaxial Wafer Resistivity <0.018ΩCm Epi Layer Thickness 381±25µM factory

3 Inch Silicon Epitaxial Wafer Resistivity <0.018ΩCm Epi Layer Thickness 381±25µM

3" Silicon Epitaxial Wafer Substrate Thickness 38125m / Resistivity Read More
2020-03-23 15:46:25
China Semi Insulating Gallium Arsenide Wafer 4 inch Prime Grade With CMP Polished factory

Semi Insulating Gallium Arsenide Wafer 4 inch Prime Grade With CMP Polished

Semi-Insulating , Gallium Arsenide Substrate With CMP Polished , 4, Prime Grade (GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications Item Specifications Remarks Conduction Type ... Read More
2020-03-23 15:57:02
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