Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.
As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.
2009, PAM-XIAMEN develop GaN technology, integrate GaN crystal substrate, epitaxy and RF& Power& LED device. It has become an integration of the R & D, design, production and sales of semiconductor materials, epitaxy, devices and modules, and connecting the whole industry chain of the third generation of semiconductors including GaN material and SiC material,
incubating VCSEL, power electronic devices, compound semiconductor RF devices, lamp packaging modules Laser packaging module and other international cutting-edge technologies.
2007, PAM-XIAMEN offer epi service based on III-V substrate (including GaAs substrate, GaSb substrate, InSb substrate,InAs substrate and InP substrate,GaN substrate, AlN substrate), material covers GaInSb,InAs,AlSb,GaInNasSb,InGaAs,AlGaAs,InGaAsP,AlInGaAs,GaAlAs,InGaAlP,AlGaInP,InGaP, InGaN, AlGaN, application includes Power &RF, Photonics, LED, solar cell and Electronics.
2004, PAM-XIAMEN offers semiconductor SiC wafers with 6H SiC and 4H SiC wafer in different quality grades for researcher and industry manufacturers. We has developed whole production line with SiC crystal growth technology and SiC wafer processing technology,size from 2” to 6”. We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.
From 2001, we develop and produce Germanium material including Germanium wafer which is for micro-electronics, optical application and solar cell.
From 1990, we devote to research and produce CZ silicon wafer and ingot, after a decade, we develop FZ silicon wafer with >1000 ohm.cm. and now we can offer wafer size from 2” to 12” with prime grade and test grade.
Brands : POWERWAY
No. of Employees : 50~100
Annual Sales : 10 Million-50 Million
Year Established : 1990
Export p.c : 70% - 80%